IEEE - Institute of Electrical and Electronics Engineers, Inc. - Quaternary AlInGaN based vertically conducting light emitting diodes on SiC

58th DRC. Device Research Conference

Author(s): Asif Khan, M. ; Adivarahan, V. ; Shatalov, M. ; Lunev, A. ; Yang, J.W. ; Simin, G. ; Gaska, R. ; Shur, M.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Denver, CO, USA, USA
Conference Date: 19 June 2000
Page(s): 123 - 124
ISBN (Paper): 0-7803-6472-4
DOI: 10.1109/DRC.2000.877116
Regular:

One of the most promising approaches to developing solid-state light sources is the use of multicolor light emitting diodes, where relative intensity of primary colors in such diodes can be... View More

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