IEEE - Institute of Electrical and Electronics Engineers, Inc. - Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices

58th DRC. Device Research Conference

Author(s): L. Tsybeskov ; L. Montes ; G.F. Grom ; R. Krishnan ; P.M. Fauchet ; B. White, Jr
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Denver, CO, USA, USA
Conference Date: 19 June 2000
Page(s): 53 - 54
ISBN (Paper): 0-7803-6472-4
DOI: 10.1109/DRC.2000.877085
Regular:

In this paper, we present a definitive experimental observation of resonant carrier tunneling in nanocrystalline Si-SiO/sub 2/ superlattices, and discuss utilization of our findings in memory... View More

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