IEEE - Institute of Electrical and Electronics Engineers, Inc. - Wideband AlGaN-GaN HEMTs on SiC for low noise applications

58th DRC. Device Research Conference

Author(s): Wu Lu ; Yang, J.W. ; Khan, M.A. ; Adesida, I.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Denver, CO, USA, USA
Conference Date: 19 June 2000
Page(s): 39 - 40
ISBN (Paper): 0-7803-6472-4
DOI: 10.1109/DRC.2000.877079
Regular:

AlGaN-GaN high electron mobility transistors (HEMTs) have attracted attention because of their extremely high current drive capability and high power performance. Although these GaN-based FETs are... View More

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