IEEE - Institute of Electrical and Electronics Engineers, Inc. - Vertical P-MOSFETs with heterojunction between source/drain and channel

58th DRC. Device Research Conference

Author(s): Xiangdong Chen ; Qipang Ouyang ; Kou-Chen Liu ; Zhonghai Shi ; Tasch, A. ; Banerjee, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Denver, CO, USA, USA
Conference Date: 19 June 2000
Page(s): 25 - 26
ISBN (Paper): 0-7803-6472-4
DOI: 10.1109/DRC.2000.877073
Regular:

The growth of high quality strained SiGe-Si and SiGeC-Si heterostructures allows incorporation of band gap engineering into Si technology, which can be used to improve device characteristics. A... View More

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