IEEE - Institute of Electrical and Electronics Engineers, Inc. - Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC

2000 IEEE Aerospace Conference Proceedings

Author(s): Chung, G.Y. ; Tin, C.C. ; Won, J.H. ; Williams, J.R. ; McDonald, K. ; Weller, R.A. ; Pantelides, S.T. ; Feldman, L.C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Big Sky, MT, USA, USA
Conference Date: 25 March 2000
Volume: 5
ISBN (Paper): 0-7803-5846-5
ISSN (Paper): 1095-323X
DOI: 10.1109/AERO.2000.878515
Regular:

We report the effect on SiO/sub 2//SiC interface state density and effective oxide charge of different Si:C ratios (0.12 to 0.55) used during the growth of n-4H and n-6H-SiC epitaxial layers. We... View More

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