IEEE - Institute of Electrical and Electronics Engineers, Inc. - Contrast measurement of reflection mask with Cr and Ta absorber for Extreme Ultraviolet Lithography

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference

Author(s): Niibe, M. ; Watanabe, T. ; Nii, H. ; Tanaka, T. ; Kinoshita, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Tokyo, Japan, Japan
Conference Date: 11 July 2000
Page(s): 288 - 289
ISBN (Paper): 4-89114-004-6
DOI: 10.1109/IMNC.2000.872767
Regular:

We chose chromium, Cr, and tantalum, Ta, metals as a new absorbing material for extreme ultraviolet lithography (EUVL) reflection mask. These metals are frequently used in photomask or X-ray mask... View More

Advertisement