IEEE - Institute of Electrical and Electronics Engineers, Inc. - Inspection of critical dimension- and transmission uniformity of contact patterns by DUV imaging and regression algorithm

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference

Author(s): K. Yamashita ; S. Yamaguchi
Sponsor(s): Japan Soc. Appl. Phys.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Tokyo, Japan, Japan
Conference Date: 11 July 2000
Page Count: 2
Page(s): 256 - 257
ISBN (Paper): 4-89114-004-6
DOI: 10.1109/IMNC.2000.872745
Regular:

The SIA roadmap requires that mask CD uniformity be 16 nm for isolated lines, 24 nm for dense lines and contact patterns of 0.18 micron generation. The purpose of this paper is to give a CD and... View More

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