IEEE - Institute of Electrical and Electronics Engineers, Inc. - Scanning Capacitance Microscopy for measuring device carrier profiles beyond the 100 nm generation

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference

Author(s): J.J. Kopanski ; J.F. Marchiando ; B.G. Rennex
Sponsor(s): Japan Soc. Appl. Phys.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Tokyo, Japan, Japan
Conference Date: 11 July 2000
Page Count: 2
Page(s): 250 - 251
ISBN (Paper): 4-89114-004-6
DOI: 10.1109/IMNC.2000.872740
Regular:

Scanning Capacitance Microscopy (SCM) is a leading candidate for a metrology capable of measuring the two-dimensional (2-D) carrier profiles of cross-sectioned silicon transistors. Since 1992,... View More

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