IEEE - Institute of Electrical and Electronics Engineers, Inc. - Etching characteristics of fine Ta patterns with electron cyclotron resonance chlorine plasma

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference

Author(s): Sang Hoon Kim ; Sang-Gyun Woo ; Jinho Ahn
Sponsor(s): Japan Soc. Appl. Phys.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Tokyo, Japan, Japan
Conference Date: 11 July 2000
Page Count: 2
Page(s): 212 - 213
ISBN (Paper): 4-89114-004-6
DOI: 10.1109/IMNC.2000.872717
Regular:

Next generation lithography requires masks with new structures fabricated by silicon process. We have studied etching characteristics of Ta, which is a strong candidate for absorber or scatterer... View More

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