IEEE - Institute of Electrical and Electronics Engineers, Inc. - Remote-plasma-enhanced etching of silicon using trifluoro-acetyl-fluoride gas

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference

Author(s): Y. Saito ; H. Yamazaki ; I. Mouri
Sponsor(s): Japan Soc. Appl. Phys.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Tokyo, Japan, Japan
Conference Date: 11 July 2000
Page Count: 2
Page(s): 204 - 205
ISBN (Paper): 4-89114-004-6
DOI: 10.1109/IMNC.2000.872710
Regular:

Recently, it is predicted that most of carbon fluorides, nitrogen trifluoride and sulfur hexafluoride, which are widely used to etch silicon related materials and extremely stable, can induce... View More

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