IEEE - Institute of Electrical and Electronics Engineers, Inc. - Intralevel mix and match lithography for sub-100 nm CMOS devices using the JBX-9300FS point-electron-beam system

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference

Author(s): M. Narihiro ; H. Wakabayashi ; M. Ueki ; K. Arai ; T. Ogura ; Y. Ochiai ; T. Mogami
Sponsor(s): Japan Soc. Appl. Phys.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Tokyo, Japan, Japan
Conference Date: 11 July 2000
Page Count: 2
Page(s): 162 - 163
ISBN (Paper): 4-89114-004-6
DOI: 10.1109/IMNC.2000.872678
Regular:

Electron Beam (EB)/Deep UV (DUV) intra-level mix and match (IL M&M) is one of the most attractive lithographic techniques, because it can achieve patterns which are smaller than the limit of... View More

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