IEEE - Institute of Electrical and Electronics Engineers, Inc. - Patterning yield of sub-100-nm holes limited by fluctuation of exposure and development reactions

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference

Author(s): K. Deguchi ; Y. Kawai ; H. Kochiya ; Y. Ushiyama ; M. Oda
Sponsor(s): Japan Soc. Appl. Phys.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Tokyo, Japan, Japan
Conference Date: 11 July 2000
Page Count: 2
Page(s): 62 - 63
ISBN (Paper): 4-89114-004-6
DOI: 10.1109/IMNC.2000.872623
Regular:

It is reported that reaction products (the stagnant layer) during development degrade the resist contrast, sensitivity, and process margin, and as a results, the reliability of fine patterning,... View More

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