IEEE - Institute of Electrical and Electronics Engineers, Inc. - Mask error factor in proximity X-ray lithography

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference

Author(s): Fujii, K. ; Suzuki, K. ; Matsui, Y.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Tokyo, Japan, Japan
Conference Date: 11 July 2000
Page(s): 58 - 59
ISBN (Paper): 4-89114-004-6
DOI: 10.1109/IMNC.2000.872621
Regular:

Many estimations have shown that an increase in mask-error factor (MEF) will be a serious issue for deep ultraviolet lithography in the 130- and 100-nm device generations. For proximity X-ray... View More

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