IEEE - Institute of Electrical and Electronics Engineers, Inc. - Asymmetric properties of the aerial image in EUVL

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference

Author(s): K. Otaki ; H. Oizumi ; M. Ito ; I. Nishiyama ; S. Okazaki
Sponsor(s): Japan Soc. Appl. Phys.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Tokyo, Japan, Japan
Conference Date: 11 July 2000
Page Count: 2
Page(s): 46 - 47
ISBN (Paper): 4-89114-004-6
DOI: 10.1109/IMNC.2000.872615
Regular:

In extreme ultraviolet lithography (EUVL), the reflective type mask is obliquely illuminated, and the oblique angle must be larger with increasing the NA of projection optics. EUV mask has the... View More

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