IEEE - Institute of Electrical and Electronics Engineers, Inc. - Simulation of multilayer defects in EUV masks

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference

Author(s): M. Ito ; T. Ogawa ; K. Otaki ; I. Nishiyama ; S. Okazaki ; T. Terasawa
Sponsor(s): Japan Soc. Appl. Phys.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Tokyo, Japan, Japan
Conference Date: 11 July 2000
Page Count: 2
Page(s): 36 - 37
ISBN (Paper): 4-89114-004-6
DOI: 10.1109/IMNC.2000.872610
Regular:

An extreme ultraviolet (EUV) mask consists of a substrate coated with a reflective multilayer and a patterned absorber layer on top. Particles and bumps on the substrate can cause structural... View More

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