IEEE - Institute of Electrical and Electronics Engineers, Inc. - Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

2000 International Conference on Simulation of Semiconductor Processes and Devices

Author(s): Eikyu, K. ; Takashino, H. ; Kidera, M. ; Teramoto, A. ; Umeda, H. ; Ishikawa, K. ; Kotani, N. ; Inuishi, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Seattle, WA, USA, Washington
Conference Date: 6 September 2000
Page(s): 257 - 260
ISBN (Paper): 0-7803-6279-9
DOI: 10.1109/SISPAD.2000.871257
Regular:

The physical oxide thickness of ultrathin oxides is extracted using the tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction.... View More

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