IEEE - Institute of Electrical and Electronics Engineers, Inc. - Monte Carlo simulation of current fluctuation at actual contact

2000 International Conference on Simulation of Semiconductor Processes and Devices

Author(s): Matsuzawa, K. ; Sano, N. ; Natori, K. ; Mukai, M. ; Nakayama, N.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Seattle, WA, USA, Washington
Conference Date: 6 September 2000
Page(s): 233 - 236
ISBN (Paper): 0-7803-6279-9
DOI: 10.1109/SISPAD.2000.871251
Regular:

Current fluctuation at an actual contact was studied using the Monte Carlo method. The metal/semiconductor interface was treated as the Schottky contact, because the interface inevitably becomes... View More

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