IEEE - Institute of Electrical and Electronics Engineers, Inc. - Prediction of SiO/sub 2/ sputtering yield using molecular dynamics simulation

2000 International Conference on Simulation of Semiconductor Processes and Devices

Author(s): Kyusang Lee ; Tai-Kyung Kim
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Seattle, WA, USA, Washington
Conference Date: 6 September 2000
Page(s): 214 - 217
ISBN (Paper): 0-7803-6279-9
DOI: 10.1109/SISPAD.2000.871246
Regular:

The surface of processed wafers during the plasma etching process is exposed to a shower of relatively high energy particles, and the surface reaction that evaporates the upper surface layer is... View More

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