IEEE - Institute of Electrical and Electronics Engineers, Inc. - Kinetics of boron activation

2000 International Conference on Simulation of Semiconductor Processes and Devices

Author(s): Mokhberi, A. ; Griffin, P.B. ; Plummer, J.D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Seattle, WA, USA, Washington
Conference Date: 6 September 2000
Page(s): 163 - 166
ISBN (Paper): 0-7803-6279-9
DOI: 10.1109/SISPAD.2000.871233
Regular:

The kinetics of boron activation were studied for a 40 keV 2/spl times/10/sup 14/ cm/sup -2/ boron implant. A large matrix of anneals with temperatures and times ranging from 500/spl deg/C to... View More

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