IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improved device technology evaluation and optimization

2000 International Conference on Simulation of Semiconductor Processes and Devices

Author(s): Connelly, D. ; Foisy, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Seattle, WA, USA, Washington
Conference Date: 6 September 2000
Page(s): 155 - 158
ISBN (Paper): 0-7803-6279-9
DOI: 10.1109/SISPAD.2000.871231
Regular:

The conventional I/sub Dsat/-I/sub DL/ (where I/sub Dsat/ is drain current for V/sub DS/=V/sub GS/=V/sub DD/ with V/sub BS/=0, and I/sub DL/ is drain current for V/sub DS/=V/sub DD/, with V/sub... View More

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