IEEE - Institute of Electrical and Electronics Engineers, Inc. - An extracting capacitance in a stacked DRAM cell by numerical method

2000 International Conference on Simulation of Semiconductor Processes and Devices

Author(s): Sukin Yoon ; Ohseb Kwon ; Sangho Yoon ; Taeyoung Won
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Seattle, WA, USA, Washington
Conference Date: 6 September 2000
Page(s): 94 - 97
ISBN (Paper): 0-7803-6279-9
DOI: 10.1109/SISPAD.2000.871216
Regular:

This paper reports a methodology and its application for extracting the capacitance of a stacked DRAM cell structure by a numerical technique. To calculate the cell and parasitic capacitance in a... View More

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