IEEE - Institute of Electrical and Electronics Engineers, Inc. - Simulation of hot hole currents in ultra-thin silicon dioxides: the relationship between time to breakdown and hot hole currents

2000 International Conference on Simulation of Semiconductor Processes and Devices

Author(s): Ezaki, T. ; Nakasato, H. ; Yamamoto, T. ; Hane, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Seattle, WA, USA, Washington
Conference Date: 6 September 2000
Page(s): 34 - 37
ISBN (Paper): 0-7803-6279-9
DOI: 10.1109/SISPAD.2000.871200
Regular:

We have investigated the relationship between the currents of hot holes injected into silicon dioxides and the time to breakdown (T/sub BD/) characteristics. The hot hole currents were calculated... View More

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