IEEE - Institute of Electrical and Electronics Engineers, Inc. - A fast three-dimensional MC simulator for tunneling diodes

2000 International Conference on Simulation of Semiconductor Processes and Devices

Author(s): Wagner, M. ; Mizuta, H. ; Nakazato, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Seattle, WA, USA, Washington
Conference Date: 6 September 2000
Page(s): 31 - 33
ISBN (Paper): 0-7803-6279-9
DOI: 10.1109/SISPAD.2000.871199
Regular:

A fast simulator is presented for 3D vertical tunneling devices with lateral confinement and gates. The tunneling current across each barrier is calculated using a combination of 3D ray tracing,... View More

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