IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dual gate oxide charging damage in damascene copper technologies

2000 5th International Symposium on Plasma Process-Induced Damage

Author(s): Stamper, A.K. ; Chou, A. ; Hook, T.B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Santa Clara, CA, USA, USA
Conference Date: 22 May 2000
Page(s): 109 - 112
ISBN (Paper): 0-9651577-4-1
DOI: 10.1109/PPID.2000.870629
Regular:

Due to growing integrated circuit (IC) performance requirements, dual-gate oxide thickness and damascene-copper wiring are increasingly being employed by the IC industry. Charging damage behavior... View More

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