IEEE - Institute of Electrical and Electronics Engineers, Inc. - Elimination of notch during gate polycide stack etching by adding nitrogen in over etch step

2000 5th International Symposium on Plasma Process-Induced Damage

Author(s): Bor-Wen Chan ; Liou, Y.H. ; Min-Hwa Chi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Santa Clara, CA, USA, USA
Conference Date: 22 May 2000
Page(s): 54 - 56
ISBN (Paper): 0-9651577-4-1
DOI: 10.1109/PPID.2000.870594
Regular:

In this paper, the notch phenomenon in sub-quarter-micron DRAM polycide gate etching process is an important issue and is improved by adding N/sub 2/ gas in the step of over-etch (OE). The... View More

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