IEEE - Institute of Electrical and Electronics Engineers, Inc. - Role of N/sub 2/ ion implantation dose on hot carrier lifetime in deep submicron NMOS devices

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems

Author(s): Guarin, F.J. ; Rauch, S.E., III ; La Rosa, G. ; Brelsford, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Cancun, Mexico
Conference Date: 17 March 2000
ISBN (Paper): 0-7803-5766-3
DOI: 10.1109/ICCDCS.2000.869837
Regular:

The impact of N/sub 2/ ion implantation (I/I) dose before gate oxide growth on Hot Carrier (HC) reliability of NMOSFETs is reported here. Improvements ranging from 20 to 30 times in HC lifetime... View More

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