IEEE - Institute of Electrical and Electronics Engineers, Inc. - Evaluation of fast turn-on characteristics of power devices by IR-laser probing technique

ICOPS 2000. IEEE Conference Record - Abstracts. 27th IEEE International Conference on Plasma Science

Author(s): Yasuoka, K. ; Ibuka, S. ; Ishii, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: New Orleans, LA, USA, USA
Conference Date: 4 June 2000
ISBN (Paper): 0-7803-5982-8
ISSN (Paper): 0730-9244
DOI: 10.1109/PLASMA.2000.855145
Regular:

Summary form only given, as follows. The IR-laser probing technique was used for evaluating the ultimate performance of the semiconductor power devices operated in fast-pulsed operation. Recently,... View More

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