IEEE - Institute of Electrical and Electronics Engineers, Inc. - Simple, reliable Cu/low-k interconnect integration using mechanically-strong low-k dielectric material: silicon-oxycarbide

Proceedings of the IEEE 2000 International Interconnect Technology Conference

Author(s): Furusawa, T. ; Sakuma, N. ; Ryuzaki, D. ; Kondo, S. ; Takeda, K. ; Machida, S.-T. ; Hinode, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Burlingame, CA, USA
Conference Date: 7 June 2000
Page(s): 222 - 224
ISBN (Paper): 0-7803-6327-2
DOI: 10.1109/IITC.2000.854331
Regular:

A new low-k material (silicon-oxycarbide, k=3.3) is developed to improve the mechanical strength of Cu/low-k interconnects. The film is shown to be over three-times stronger than... View More

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