IEEE - Institute of Electrical and Electronics Engineers, Inc. - Film properties and surface profile after gap fill of electrochemically deposited Cu films by DC and pulse reverse processes

Proceedings of the IEEE 2000 International Interconnect Technology Conference

Author(s): Hsieh, C.H. ; Chou, S.W. ; Shue, S.L. ; Yu, C.H. ; Liang, M.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Burlingame, CA, USA
Conference Date: 7 June 2000
Page(s): 182 - 184
ISBN (Paper): 0-7803-6327-2
DOI: 10.1109/IITC.2000.854319
Regular:

The self-annealing and the surface reflectivity of Cu films prepared by electrochemical deposition (ECD) are obtained for the DC and pulse reverse processes. They show different behaviors for... View More

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