IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ultra-low dielectric constant low density material (k=2.2) for Cu damascene

Proceedings of the IEEE 2000 International Interconnect Technology Conference

Author(s): Cheng, Y.Y. ; Chao, L.C. ; Jang, S.M. ; Yu, C.H. ; Liang, M.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Burlingame, CA, USA
Conference Date: 7 June 2000
Page(s): 161 - 163
ISBN (Paper): 0-7803-6327-2
DOI: 10.1109/IITC.2000.854312
Regular:

We have examined film properties of ultra-low dielectric constant low-density spin on glass with a dielectric constant of 2.2 (SOG-2.2). SOG-2.2 can stand higher shear strength and demonstrates... View More

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