IEEE - Institute of Electrical and Electronics Engineers, Inc. - 0.42 /spl mu/m contacted pitch dual damascene copper interconnect for 0.15 /spl mu/m EDRAM using tapered via aligned to trench

Proceedings of the IEEE 2000 International Interconnect Technology Conference

Author(s): Hattori, T. ; Masuda, H. ; Sato, H. ; Matsuda, T. ; Yamamoto, A. ; Kato, Y. ; Ogawa, S. ; Ohsaki, A. ; Ueda, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Burlingame, CA, USA
Conference Date: 7 June 2000
Page(s): 155 - 157
ISBN (Paper): 0-7803-6327-2
DOI: 10.1109/IITC.2000.854310
Regular:

A tapered via aligned to a trench without any expanding of trench width for 0.42 /spl mu/m contacted pitch dual damascene Cu interconnect has been studied. Cu via filling and via electrical... View More

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