IEEE - Institute of Electrical and Electronics Engineers, Inc. - Cu dual damascene process for 0.13 um technology generation using self ion sputtering (SIS) with ion reflector

Proceedings of the IEEE 2000 International Interconnect Technology Conference

Author(s): Wada, J. ; Sakata, A. ; Matsuyama, H. ; Watanabe, K. ; Katata, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Burlingame, CA, USA
Conference Date: 7 June 2000
Page(s): 108 - 110
ISBN (Paper): 0-7803-6327-2
DOI: 10.1109/IITC.2000.854296
Regular:

Newly developed self ion sputtering(SIS) system is applied to Cu seed formation for electroplating (EP)-Cu filling. SIS is a bias sputtering using Cu/sup +/ ions generated by self sustained Cu... View More

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