IEEE - Institute of Electrical and Electronics Engineers, Inc. - Physical and electrical characterization of silsesquioxane-based ultra-low k dielectric films

Proceedings of the IEEE 2000 International Interconnect Technology Conference

Author(s): Donaton, R.A. ; Iacopi, F. ; Baklanov, R. ; Shamiryan, D. ; Coenegrachts, B. ; Struyf, H. ; Lepage, M. ; Meuris, M. ; van Hove, M. ; Gray, W.D. ; Meynen, H. ; de Roest, D. ; Vanhaelemeersch, S. ; Maex, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Burlingame, CA, USA
Conference Date: 7 June 2000
Page(s): 93 - 95
ISBN (Paper): 0-7803-6327-2
DOI: 10.1109/IITC.2000.854292
Regular:

Physical and electrical characterization of a Dow Corning silsesquioxane-based ultra-low k dielectric is presented. The film properties, such as refractive index, SiH bond density, thermal... View More

Advertisement