IEEE - Institute of Electrical and Electronics Engineers, Inc. - Lithography as a critical step for low-k dual damascene: from 248 nm to 193 nm

Proceedings of the IEEE 2000 International Interconnect Technology Conference

Author(s): Ronse, K. ; Maenhoudt, M. ; Pollentier, I. ; Wiaux, V. ; Struyf, H. ; Lepage, M. ; Vanhaelemeersch, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Burlingame, CA, USA
Conference Date: 7 June 2000
Page(s): 87 - 89
ISBN (Paper): 0-7803-6327-2
DOI: 10.1109/IITC.2000.854290
Regular:

Optical lithography is continuously pushed to its limits for volume manufacturing of integrated circuits. With the implementation of low-k dielectrics in the back-end-of-line processes, the... View More

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