IEEE - Institute of Electrical and Electronics Engineers, Inc. - Irregular growth of PECVD-Ti silicide film on doped Si substrates

Proceedings of the IEEE 2000 International Interconnect Technology Conference

Author(s): Kaori Tai ; Yusuke Harada ; Muneyuki Matsumoto ; Hisanori Oki
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Burlingame, CA, USA
Conference Date: 7 June 2000
Page(s): 64 - 66
ISBN (Paper): 0-7803-6327-2
DOI: 10.1109/IITC.2000.854283
Regular:

Adhesion, cohesive strength, modulus, and hardness of the porous silica ILD film via organic/inorganic hybrid (ALCAP-S) with various kinds of film thickness were investigated and the preliminary... View More

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