IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of fluorinated plasma on SiLK during mineral hard masks etching

Proceedings of the IEEE 2000 International Interconnect Technology Conference

Author(s): Maisonobe, J.C. ; Ermolieff, A. ; Holliger, P. ; Laugier, F. ; Passemard, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Burlingame, CA, USA
Conference Date: 7 June 2000
Page(s): 58 - 60
ISBN (Paper): 0-7803-6327-2
DOI: 10.1109/IITC.2000.854281
Regular:

This paper concerns the integration of low-k dielectric SiLK as interconnect insulator with copper metallization. It describes more particularly the impact of hard mask etching on SiLK. It was... View More

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