IEEE - Institute of Electrical and Electronics Engineers, Inc. - The characterization of trimethylsilane based PE-CVD /spl alpha/-SiCO:H low-k films

Proceedings of the IEEE 2000 International Interconnect Technology Conference

Author(s): Wang, B.K. ; Loboda, M.J. ; Cerny, G.A. ; Schneider, R.F. ; Seifferly, J.A. ; Washer, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Burlingame, CA, USA
Conference Date: 7 June 2000
Page(s): 52 - 54
ISBN (Paper): 0-7803-6327-2
DOI: 10.1109/IITC.2000.854279
Regular:

The trimethylsilane (3MS) based low-k /spl alpha/-SiCO:H films can be made using 3MS, He and N/sub 2/O in typical PECVD equipment. In this study, the structure, composition, and electrical... View More

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