IEEE - Institute of Electrical and Electronics Engineers, Inc. - Development of TiSiN diffusion barriers for Cu/SiLK metallization schemes

Proceedings of the IEEE 2000 International Interconnect Technology Conference

Author(s): Sankaran, S. ; Harris, W. ; Nuesca, G. ; Shaffer, E.O. ; Hiartin, S.J. ; Geer, R.E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Burlingame, CA, USA
Conference Date: 7 June 2000
Page(s): 40 - 42
ISBN (Paper): 0-7803-6327-2
DOI: 10.1109/IITC.2000.854275
Regular:

Diffusion barrier optimization and compatibility studies were undertaken with respect to the integration of Cu/TiSiN stacks on SiLK low-k dielectric films. First-pass testing optimized TiSiN film... View More

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