IEEE - Institute of Electrical and Electronics Engineers, Inc. - Trench and via filling profile simulations for copper electroplating process

Proceedings of the IEEE 2000 International Interconnect Technology Conference

Author(s): Kobayashi, K. ; Sano, A. ; Akahoshi, H. ; Itabashi, T. ; Haba, T. ; Fukada, S. ; Miyazaki, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Burlingame, CA, USA
Conference Date: 7 June 2000
Page(s): 34 - 36
ISBN (Paper): 0-7803-6327-2
DOI: 10.1109/IITC.2000.854273
Regular:

We have developed a simulation method to calculate filling profile in sub-micron scale trenches and vias using Cu electroplating. The physical properties (diffusivity and surface reaction rate) of... View More

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