IEEE - Institute of Electrical and Electronics Engineers, Inc. - Interfacial degradation of epoxy-coated silicon nitride

2000 Proceedings. 50th Electronic Components and Technology Conference

Author(s): Jongwoo Park ; Harlow, D.G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Las Vegas, NV, USA, USA
Conference Date: 21 May 2000
Page(s): 397 - 402
ISBN (Paper): 0-7803-5908-9
DOI: 10.1109/ECTC.2000.853184
Regular:

A silicon (Si) wafer passivated with a nitride film, fabricated by low-pressure chemical vapor deposition, and coated with epoxy was used as a test specimen to characterized the interfacial... View More

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