IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electric field gradient dependence of excess avalanche noise

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO

Author(s): Tan, C.H. ; Plimmer, S.A. ; David, J.P.R. ; Rees, G.J. ; Tozer, R.C. ; Clark, J. ; Grey, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: London, UK, United Kingdom
Conference Date: 23 November 1999
Page(s): 230 - 235
ISBN (Paper): 0-7803-5298-X
DOI: 10.1109/EDMO.1999.821490
Regular:

Electron initiated avalanche noise measurements were performed on two Al/sub 0.3/Ga/sub 0.7/As pn/sup +/ diodes with p-region doping density N/sub a/=1.6/spl times/10/sup 17/ cm/sup -3/ and N/sub... View More

Advertisement