IEEE - Institute of Electrical and Electronics Engineers, Inc. - Band gap tuning by a buried Ge interlayer in quantum well intermixing

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO

Author(s): Teng, J.H. ; Chua, S.J. ; Li, G. ; Helmy, A.S. ; Marsh, J.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: London, UK, United Kingdom
Conference Date: 23 November 1999
Page(s): 194 - 199
ISBN (Paper): 0-7803-5298-X
DOI: 10.1109/EDMO.1999.821484
Regular:

A novel and simple technique for controlling the shift in band gap in AlGaAs/GaAs and InGaAs/GaAs quantum well (QW) structures is reported. It involves the evaporation of a thin Ge layer and then... View More

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