IEEE - Institute of Electrical and Electronics Engineers, Inc. - An OEMS study of trap states at the active layer interface with the substrate in ion implanted GaAs MESFETs

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO

Author(s): Chi-Hsin Chiu ; Swanson, J.G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: London, UK, United Kingdom
Conference Date: 23 November 1999
Page(s): 188 - 193
ISBN (Paper): 0-7803-5298-X
DOI: 10.1109/EDMO.1999.821483
Regular:

Using OptoElectronic Modulation Spectroscopy (OEMS) we are now able to measure, simultaneously and independently, charges which are trapped in the gate depletion region and in the back plane... View More

Advertisement