IEEE - Institute of Electrical and Electronics Engineers, Inc. - On wafer intermodulation distortion measurements on resistive FET mixers for device comparison and model validation

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO

Author(s): Hutabarat, M.T. ; Webster, D.R. ; Haigh, D.G. ; Schreurs, D. ; van der Zanden, K. ; Edgar, D.L. ; Borsosfoldi, Z. ; Elgaid, K. ; Thayne, I.G. ; Parker, A.E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: London, UK, United Kingdom
Conference Date: 23 November 1999
Page(s): 170 - 175
ISBN (Paper): 0-7803-5298-X
DOI: 10.1109/EDMO.1999.821480
Regular:

This work describes an "on wafer" mixer measurement test set that is close to real single FET mixer designs. The test set demonstrated for the first time that some GaAs p-HEMTs have better 3rd... View More

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