IEEE - Institute of Electrical and Electronics Engineers, Inc. - Noise properties in SiGe BiCMOS devices

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO

Author(s): Tartarin, J.G. ; Plana, R. ; Borgarino, M. ; Lafontaine, H. ; Regis, M. ; Llopis, O. ; Kovacic, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: London, UK, United Kingdom
Conference Date: 23 November 1999
Page(s): 131 - 136
ISBN (Paper): 0-7803-5298-X
DOI: 10.1109/EDMO.1999.821473
Regular:

This paper deals with the investigation of the noise properties of a commercially available SiGe BiCMOS technology. We present some results related with the high frequency noise behavior of these... View More

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