IEEE - Institute of Electrical and Electronics Engineers, Inc. - High power microwave SiC MESFET technology

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO

Author(s): Hilton, K.P. ; Uren, M.J. ; Hayes, D.G. ; Wilding, P.J. ; Johnson, H.K. ; Guest, J.J. ; Smith, B.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: London, UK, United Kingdom
Conference Date: 23 November 1999
Page(s): 71 - 74
ISBN (Paper): 0-7803-5298-X
DOI: 10.1109/EDMO.1999.821462
Regular:

A silicon carbide MESFET technology has been established. Single finger and multifinger power devices have been fabricated. Ft and Fmax of 6 and 18 GHz respectively were obtained from single... View More

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