IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design limitations for InGaN/AlGaN/GaN lasers imposed by resonant mode coupling

Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics

Author(s): G.A. Smolyakov ; P.G. Eliseev ; M. Osinski
Sponsor(s): IEEE/Lasers & Electro-Opt. Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Baltimore, MD, USA, USA
Conference Date: 28 May 1999
Page Count: 1
ISBN (Paper): 1-55752-595-1
DOI: 10.1109/CLEO.1999.834084
Regular:

Summary form only given. Present-day InGaN-AlGaN-GaN semiconductor lasers typically contain a multiple optical waveguide structure, with refractive indices of several layers (GaN buffer-substrate,... View More

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