IEEE - Institute of Electrical and Electronics Engineers, Inc. - Total-dose tolerance of a chartered semiconductor 0.35-/spl mu/m CMOS process

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference

Author(s): Lacoe, R.C. ; Osborn, J.V. ; Mayer, D.C. ; Witczak, S.C. ; Brown, S. ; Robertson, R. ; Hunt, D.R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Norfolk, VA, USA, USA
Conference Date: 12 July 1999
Page(s): 82 - 86
ISBN (Paper): 0-7803-5660-8
DOI: 10.1109/REDW.1999.816059
Regular:

MOSFETs fabricated in the commercial Chartered Semiconductor 0.35-/spl mu/m CMOS process were characterized with respect to the effects of total dose irradiation. Gate oxide threshold voltage... View More

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