IEEE - Institute of Electrical and Electronics Engineers, Inc. - Single-event upset test results for the Xilinx XQ1701L PROM

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference

Author(s): Guertin, S.M. ; Swift, G.M. ; Nguyen, D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Norfolk, VA, USA, USA
Conference Date: 12 July 1999
Page(s): 35 - 40
ISBN (Paper): 0-7803-5660-8
DOI: 10.1109/REDW.1999.816054
Regular:

A 3.3 V serial PROM, used to configure advanced Xilinx FPGAs, was tested for single event effects with heavy ions. Device latchup was observed with an LET threshold of 55 MeV per mg/cm/sup 2/ and... View More

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