IEEE - Institute of Electrical and Electronics Engineers, Inc. - The characteristics of wet gate oxide device and nitride oxide (NO) device

Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure'

Author(s): Yi Jae-Young ; Lee Yong-Hui ; Szirmay-Kalos Laszlo ; Yi Cheon-Hee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Cheju Island, South Korea, South Korea
Conference Date: 15 September 1999
Volume: 2
ISBN (Paper): 0-7803-5739-6
DOI: 10.1109/TENCON.1999.818625
Regular:

In this paper we fabricated and tested the 0.26 /spl mu/m NMOSFET with wet gate oxide and nitride oxide gate to compare that the characteristics of hot carrier effect, charge to breakdown,... View More

Advertisement